Title :
Characterisation of low-stress LPCVD silicon nitride in high frequency BJT´s with self-aligned metallization
Author :
van Zeijl, H.W. ; Nanver, L.K.
Author_Institution :
Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
Abstract :
In the self-aligned metallization process, a metal base contact is self-aligned to the emitter by using free-standing silicon nitride spacers directly on the silicon. Low-stress silicon nitride (SiNx ) is electrically characterized for use as a spacer material in this process. A comparison is also made to stoichiometric Si3N4 for which mechanical stress related problems can in some cases reduce the device yield. Overall good device characteristics and yield are obtained with the SiNx spacers
Keywords :
CVD coatings; bipolar transistors; dielectric thin films; semiconductor device metallisation; silicon compounds; Si3N4; SiN; device characteristics; device yield; free-standing silicon nitride spacers; high frequency BJT; low-stress LPCVD layer; mechanical stress; self-aligned metallization; yield; Boron; Contacts; Doping; Frequency; Inorganic materials; Metallization; Silicon compounds; Space technology; Stress; Wet etching;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785810
