Title :
Dip-shaped AlGaN/AlN quantum well structures with high TE-polarized optical gain
Author :
Seoung-Hwan Park ; Joing-In Shim
Author_Institution :
Dept. of Electron. Engeering, Catholic Univ. of Daegu, Hayang, South Korea
fDate :
June 30 2013-July 4 2013
Abstract :
Optical gain characteristics of dip-shaped AlGaN/AlN quantum well (QW) structures in deep-ultraviolet (UV) spectral region were investigated using non-Markovian model with the many-body effect. For a high Al composition of 0.85, the conventional AlGaN/AlN QW structure shows that TM-polarization is dominant. On the other hand, with the inclusion of the lower bandgap AlGaN layer, the polarization property changes from TM-polarization to TE-polarization with a small wavelength change.
Keywords :
III-V semiconductors; aluminium compounds; effective mass; gallium compounds; light polarisation; many-body problems; semiconductor quantum wells; ultraviolet spectra; wide band gap semiconductors; AlGaN-AlN; TE-polarized optical gain; TM-polarization; deep-ultraviolet spectral region; dip-shaped quantum well structures; effective-mass theory; many-body effect; nonMarkovian model; optical gain characteristics; Aluminum gallium nitride; Biomedical optical imaging; Electron optics; III-V semiconductor materials; Light emitting diodes; Optical polarization; Photonic band gap;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600378
