Title :
MOTT SiGe SIMMWICs
Author :
Strohm, K.M. ; Luy, J.-F. ; Hackbarth, T. ; Kosslowski, S.
Author_Institution :
Daimler Benz Res. Center, Ulm, Germany
Abstract :
Mixer diodes in SIMMWIC (silicon millimeter wave integrated circuit) technology with barrier height reducing n/sup +/ cap layers and SiGe top layers are investigated. The standard Mott diode with Ti-metallization has a barrier height of 0.5 V. By introducing an n/sup +/ cap layer of 10 nm thickness and a doping concentration of 2*10/sup 18/ cm/sup -3/ a barrier height reduction of 0.08 V is achieved, while a 8 nm thick SiGe layer with 30% Ge increases the barrier height about 0.06 V. Conversion loss of 6.5 dB is measured in single ended mixers with an LO power of 10 dBm. The 1/f noise corner frequency is at 3 kHz for diode currents of 1 mA.
Keywords :
1/f noise; Ge-Si alloys; MIMIC; Schottky diode mixers; millimetre wave diodes; millimetre wave mixers; semiconductor device noise; semiconductor materials; 1/f noise corner frequency; 6.5 dB; LO power; Mott SiGe SIMMWIC; SiGe; Ti metallization; barrier height; conversion loss; doping concentration; mixer diode; n/sup +/ cap layer; silicon millimeter wave integrated circuit; Diodes; Doping; Germanium silicon alloys; Integrated circuit technology; Loss measurement; Measurement standards; Millimeter wave integrated circuits; Millimeter wave technology; Power measurement; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700705
