• DocumentCode
    3062929
  • Title

    Fundamentals of CMP for IC manufacturing: recent progress

  • Author

    Shi, Frank G. ; Zhao, Bin

  • Author_Institution
    Sch. of Eng., California Univ., Irvine, CA, USA
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    113
  • Lastpage
    115
  • Abstract
    Preston´s equation, constituting the current basis for CMP process control and consumables development in IC manufacturing, was demonstrated recently to be fundamentally flawed for polishing with soft pads which are usually used in the IC industry. In contrast to the conventional Preston´s equation, the pressure dependence of the removal rate (RR) for CMP with soft pads was found to be sublinear, i.e., RR∝P2/3. This paper summarizes this and our other recent progress in CMP fundamentals for IC manufacturing
  • Keywords
    chemical mechanical polishing; integrated circuit interconnections; integrated circuit manufacture; process control; semiconductor process modelling; IC manufacturing; Preston´s equation; chemical mechanical polishing; pressure dependence; process control; removal rate; soft pads; Abrasives; Atom optics; Difference equations; Electrical equipment industry; Industrial control; Manufacturing industries; Manufacturing processes; Planarization; Process control; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785814
  • Filename
    785814
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3062929