DocumentCode
3062948
Title
New generation CMP equipment and its Impact on IC devices
Author
Jin, Raymond R.
Author_Institution
Appl. Mater., Santa Clara, CA, USA
fYear
1998
fDate
1998
Firstpage
116
Lastpage
119
Abstract
This paper will receive and report advancements in new generation CMP equipment (MIRRA(R)) development for different CMP applications in IC fabrication: SOI, silicon/polysilicon, shallow trench isolation (STI), oxide (PMD and ILD), W, Cu, Al. The impact of new generation CMP equipment on IC device fabrication and its performance is also discussed
Keywords
chemical mechanical polishing; integrated circuit technology; oxidation; silicon-on-insulator; Al; Cu; IC fabrication; SOI; Si-SiO; W; chemical mechanical polishing; new generation CMP equipment; polysilicon; shallow trench isolation; Artificial intelligence; Biomembranes; Electronic mail; Fabrication; Optical films; Optical recording; Productivity; Signal processing; Silicon; Slurries;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785815
Filename
785815
Link To Document