Title :
New generation CMP equipment and its Impact on IC devices
Author_Institution :
Appl. Mater., Santa Clara, CA, USA
Abstract :
This paper will receive and report advancements in new generation CMP equipment (MIRRA(R)) development for different CMP applications in IC fabrication: SOI, silicon/polysilicon, shallow trench isolation (STI), oxide (PMD and ILD), W, Cu, Al. The impact of new generation CMP equipment on IC device fabrication and its performance is also discussed
Keywords :
chemical mechanical polishing; integrated circuit technology; oxidation; silicon-on-insulator; Al; Cu; IC fabrication; SOI; Si-SiO; W; chemical mechanical polishing; new generation CMP equipment; polysilicon; shallow trench isolation; Artificial intelligence; Biomembranes; Electronic mail; Fabrication; Optical films; Optical recording; Productivity; Signal processing; Silicon; Slurries;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785815
