DocumentCode
3063039
Title
Fiber-optic photoluminescence measurement system for evaluation of InGaN/GaN LED epi-wafer morphology
Author
Woohyun Jung ; Jongki Kim ; Hang-Eun Joe ; Byung-Kwon Min ; Kyunghwan Oh
Author_Institution
Inst. of Phys. & Appl. Phys., Yonsei Univ., Seoul, South Korea
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
We proposed a compact and simple photoluminescence measurement system based on fiber-optic probes that can be scanned over a wide area with a high spatial resolution. We applied the system in morphological study of GaN epitaxial layers for LED applications.
Keywords
III-V semiconductors; epitaxial layers; light emitting diodes; optical fibres; photoluminescence; probes; wide band gap semiconductors; InGaN-GaN; LED epi-wafer morphology; epitaxial layers; fiber-optic probes; photoluminescence measurement system; Gallium nitride; Light emitting diodes; Measurement by laser beam; Optical fibers; Spatial resolution; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600385
Filename
6600385
Link To Document