Electrochemical etching used on UHV/CVD epitaxial thin films

Author

Jia, Hongyong ; Jin, Xiaojun ; Zhang, Jinshu ; Chen, Peiyi ; Tsien, Peihsin

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

1998

fDate

1998

Firstpage

135

Lastpage

138

Abstract

Ultra High Vacuum Chemical Vapor Deposition (UHV/CVD) is carried out to deposit silicon. The deposition is carried out in the temperature range of 550 to 800°C. Electrochemical etching is used to test the defects in epitaxial films. Two different ways of etching were performed to validate the thin film etching. The results is almost the same. The defects are visible by the microscope at about 600×. It is found that the film quality is good in two extreme temperature ranges, i.e. 500 to 700°C and above 750°C, which was also observed by other authors. The defect density is estimated to be in the order of 10⁶ to 10⁸ cm^-2, including line defects, even micro-defects because of the poor environment cleanliness

Keywords

CVD coatings; dislocation etching; electrochemistry; elemental semiconductors; semiconductor epitaxial layers; silicon; surface chemistry; 550 to 800 C; Si; UHV/CVD epitaxial thin films; defect density; defects; electrochemical etching; film quality; line defects; micro-defects; silicon; thin film etching; ultra high vacuum chemical vapor deposition; Chemical vapor deposition; Epitaxial growth; Etching; Microelectronics; Microscopy; Silicon alloys; Silicon germanium; Temperature; Testing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785822

Filename

785822