Title :
Electrochemical etching used on UHV/CVD epitaxial thin films
Author :
Jia, Hongyong ; Jin, Xiaojun ; Zhang, Jinshu ; Chen, Peiyi ; Tsien, Peihsin
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Ultra High Vacuum Chemical Vapor Deposition (UHV/CVD) is carried out to deposit silicon. The deposition is carried out in the temperature range of 550 to 800°C. Electrochemical etching is used to test the defects in epitaxial films. Two different ways of etching were performed to validate the thin film etching. The results is almost the same. The defects are visible by the microscope at about 600×. It is found that the film quality is good in two extreme temperature ranges, i.e. 500 to 700°C and above 750°C, which was also observed by other authors. The defect density is estimated to be in the order of 106 to 108 cm-2, including line defects, even micro-defects because of the poor environment cleanliness
Keywords :
CVD coatings; dislocation etching; electrochemistry; elemental semiconductors; semiconductor epitaxial layers; silicon; surface chemistry; 550 to 800 C; Si; UHV/CVD epitaxial thin films; defect density; defects; electrochemical etching; film quality; line defects; micro-defects; silicon; thin film etching; ultra high vacuum chemical vapor deposition; Chemical vapor deposition; Epitaxial growth; Etching; Microelectronics; Microscopy; Silicon alloys; Silicon germanium; Temperature; Testing; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785822
