DocumentCode :
3063060
Title :
Development of the measurement method of dielectric constant of low-k film in the millimeter wave region
Author :
Kawate, Etsuo ; Prijamboedi, Bambang
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
fYear :
2004
fDate :
27 Sept.-1 Oct. 2004
Firstpage :
801
Lastpage :
802
Abstract :
We have developed a free-space transmittance measurement method to study the dielectric property of a thin and low-dielectric (low-k) film in the millimeter wave region. The discovery is that multi-reflection keeps the height of the repeated peaks of the transmittance almost constant and that their widths quickly narrow with increase in the incident angle. We report the relative transmittance spectrum obtained from a 10 μm thick silicon dioxide film on a 700 μm thick silicon substrate near the electromagnetic waves of frequency 65 GHz.
Keywords :
dielectric thin films; millimetre wave spectra; permittivity; silicon; silicon compounds; 10 micron; 65 GHz; 700 micron; SiO2-Si-SiO2; dielectric constant; electromagnetic waves; free space transmittance measurement method; low dielectric film; low-k film; millimeter wave region; silicon dioxide film; silicon substrate; thin dielectric film; transmittance spectrum; Dielectric constant; Dielectric measurements; Dielectric thin films; Electromagnetic scattering; Frequency; Millimeter wave measurements; Millimeter wave technology; Semiconductor films; Silicon compounds; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
Type :
conf
DOI :
10.1109/ICIMW.2004.1422337
Filename :
1422337
Link To Document :
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