The control of pattern distortion and drift in epitaxial layer

The orientation deviation is the main factor influencing pattern distortion in epitaxial buried layers on p-type ⟨100⟩ silicon substrate. It is pointed out that better patterns can be obtained by deviating the orientation of the p-type ⟨100⟩ wafer 2°~3° from the ⟨100⟩ axis toward the nearest ⟨110⟩ axis. This is somewhat different from the commonly adopted epitaxial growth condition