Title :
A study of EOS failures in power IGBT modules
Author :
Wu, Wuchen ; Wu, Li ; Zhang, Hua ; Dong, Lmin ; Jacob, Peter ; Held, Marcel
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
The influences of electrical overstress (EOS) on the reliability of power-insulated gate bipolar transistor (IGBT) modules were investigated by switching, frequency, and blocking tests. This paper reports the test results and the failure analysis results. Some conclusions, from the point of IGBT application reliability view, are also provided in this paper
Keywords :
electrostatic discharge; failure analysis; insulated gate bipolar transistors; power bipolar transistors; semiconductor device reliability; semiconductor device testing; EOS failures; blocking tests; electrical overstress; failure analysis; frequency tests; power IGBT modules; reliability; switching tests; Circuit testing; Diodes; Earth Observing System; Electronic equipment testing; Failure analysis; Frequency; Insulated gate bipolar transistors; Leg; Thyristors; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785833
