Title :
Theory and simulation of SiGe anode LIGBT
Author :
Li, Ping ; You, Mengsi ; Su, Yajuan ; Li, Xuening
Author_Institution :
Res. Inst. of Microelectr., Univ. of Electron. Sci. & Technol. of China, Hefei, China
Abstract :
A novel high-speed heterojunction power device, SiGe anode lateral insulated gate bipolar transistor (SiGe-A-LIGBT), is proposed and verified by 2-D simulation in this paper. It is shown that the SiGe-A-LIGBT has all of the advantages of the Schottky injection FET (SINFET), while overcoming its disadvantages, such as the repetition and the controllability of the process, and the adjustability of the injection level of the minority carrier
Keywords :
Ge-Si alloys; insulated gate bipolar transistors; minority carriers; power bipolar transistors; semiconductor device models; semiconductor materials; 2D simulation; LIGBT; SiGe; high-speed heterojunction power device; injection level; lateral insulated gate bipolar transistor; minority carrier; process controllability; Anodes; Conductivity; Degradation; Germanium silicon alloys; Heterojunctions; Insulated gate bipolar transistors; MOSFET circuits; Power integrated circuits; Schottky barriers; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785835
