Research of a Fast High Voltage Semiconductor Switch

Presently, there are many categories of devices operating at Pulse Forming Networks (PFNs) for high Pulse Repetition Frequency (PRF) modulation. This paper aims to discuss a fast high voltage semiconductor switch using Metal Oxide Semiconductors Field Effect Transistors (MOSFETs) suitable for use in PRF circuits, and switching is fast compared with the others (e.g. using IGBTs, Insulated Gate Bipolar Transistors etc.). In addition, this device possesses three major benefits with regard to PRF. Firstly, its improved transitional performance effectively, and with excellent operating parameters (e.g. fast output transition time, pulse width). Secondly, it is able to operate in considerably high voltage (e.g. over three kilovolts, 3kV). Lastly, it possess an applicable range widely, such as communication engineering (e.g. PRF radar systems), physical sciences (e.g. Mass Spectrometer and Nuclear Magnetic Resonance) and electrical engineering (e.g. Laser systems) etc.