DocumentCode :
3063173
Title :
InP heterostructure photonic crystal waveguide fabricated by high-aspect-ratio ICP etching
Author :
Kaiyu Cui ; Yongzhuo Li ; Xue Feng ; Fang Liu ; Yidong Huang ; Wei Zhang
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
InP heterostructure photonic crystal waveguide (PCW) is fabricated by ICP etching with high-aspect-ratio of 45. Structure-dependent transmission-dip about 17dB and micro-photoluminescence linewidth of only 73nm are demonstrated in a 17μm-long heterostructure PCW.
Keywords :
III-V semiconductors; etching; optical fabrication; optical waveguides; photoluminescence; photonic crystals; InP; high-aspect-ratio ICP etching; micro-photoluminescence; photonic crystal waveguide; wavelength 73 nm; Etching; Indium phosphide; Integrated optics; Iterative closest point algorithm; Optical device fabrication; Optical waveguides; Photonic crystals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6600391
Filename :
6600391
Link To Document :
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