Title :
The influence of temperature on BSIT´s turn-off time
Author :
Yanfeng, Jiang ; Siyuan, Li ; Hairong, Li
Author_Institution :
Dept. of Phys., Lanzhou Univ., China
Abstract :
The result from experiments show that the BSIT´s turn-off time increases remarkably with temperature rise. On the basis of BSIT´s operational mechanism, the turn-off process is discussed and divided into two parts, the two-dimensional process and the one-dimensional process, corresponding to saving time and falling time. The equation for the turn-off time is deduced and analyzed. According to this analysis, the influence of temperature on BSIT´s turn-off time can be estimated and the result accords with experiment very well
Keywords :
power field effect transistors; power semiconductor switches; semiconductor device models; static induction transistors; BSIT; falling time; one-dimensional process; operational mechanism; saving time; temperature rise; turn-off time; two-dimensional process; Epitaxial layers; Equations; Low voltage; Physics; Plasma sources; Plasma temperature; Switches; Time measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785839
