• DocumentCode
    3063293
  • Title

    The voltage controlled current bistability (VCCB) in DUBAT

  • Author

    Weilian, Guo ; Yuanfen, Zheng ; Yuxing, Song ; Yunguang, Zheng ; Shurong, Li

  • Author_Institution
    Sch. of Electron. Inf. Eng., Tianjin Univ., China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    184
  • Lastpage
    187
  • Abstract
    In this paper the voltage controlled current bistability (VCCB) hysteresis loop has been found in the IC-VBE characteristics for the DUal BAse transistor (DUBAT). The ratio of high current to low current (R) is 945 and the width of bistability loop is 3.38 V. The minimum rise time tτ of VCCB is near 40 ns. It is possible that VCCB of DUBAT can be used to make a Static Random Access Memories (SRAM) cell in the near future
  • Keywords
    SRAM chips; bipolar transistors; hysteresis; negative resistance devices; stability; DUBAT; I-V characteristics; SRAM cell; dual base transistor; hysteresis loop; static RAM cell; static random access memories; voltage controlled current bistability; Bipolar transistors; Diodes; Hysteresis; Logic devices; Manufacturing; Random access memory; Resonance; SRAM chips; Silicon; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785848
  • Filename
    785848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063293