Title :
Optimization of MOSFETs with polysilicon-elevated source/drain
Author :
Zimin, Sun ; Litian, Liu ; Zhijian, Li
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
As MOSFETs size shrinks into the deep-submicrometer regime, shallow source and drain junctions and small source/drain series resistance will be required. MOSFET with polysilicon-elevated source/drain (PESD) structure can meet these requirements, and is an ideal candidate. This paper gives the optimization method for MOSFETs of such kind of structure
Keywords :
MOSFET; capacitance; optimisation; silicon; MOSFET optimization; deep-submicron regime; polysilicon-elevated source/drain; Capacitance; Circuit simulation; Delay effects; Erbium; Inverters; MOSFET circuits; Medical simulation; Microelectronics; Sun; Transconductance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785849
