Title :
Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy
Author :
Zhongli, Liu ; Zhijing, He ; Fang, Yu ; Jiping, Nie ; Yuanhuan, Yu
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
CMOS/SOS devices have lower carrier mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly result from the defects in the heteroepitaxial silicon film, especially from the defects near the Si-sapphire interface. This paper describes an experimental study of the improvement in CMOS/SOS devices characteristics resulting from improved epitaxial silicon quality which is obtained by modified solid phase epitaxy
Keywords :
CMOS integrated circuits; carrier mobility; integrated circuit technology; leakage currents; semiconductor growth; silicon-on-insulator; solid phase epitaxial growth; CMOS/SOS devices; SOS-CMOS devices; SPE growth; Si-Al2O3; Si-sapphire interface; carrier mobility; channel leakage current; device characteristics improvement; epitaxial Si quality improvement; modified solid phase epitaxy; Annealing; Crystallization; Epitaxial growth; Helium; Ion implantation; Leakage current; Semiconductor films; Silicon; Solids; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785850
