DocumentCode :
3063382
Title :
Advanced silver metallization for ULSI applications
Author :
Alford, Terry L.
Author_Institution :
Dept. of Chem., Bio & Mater. Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
1998
fDate :
1998
Firstpage :
202
Lastpage :
205
Abstract :
In an attempt to make Ag-metallization more compatible with current IC manufacturing, we have successfully dry-etched Ag in oxygen plasma. The metallisation system uses an Ag/Ti/SiO2 stack structure
Keywords :
ULSI; integrated circuit metallisation; plasma materials processing; silicon compounds; silver; sputter etching; titanium; Ag-Ti-SiO2; Ag-metallization; Ag/Ti/SiO2 stack structure; IC manufacturing; ULSI applications; dry-etch; metallisation system; oxygen plasma; silver metallization; Annealing; Conductivity; Encapsulation; Metallization; Optical films; Optical scattering; Plasma temperature; Silver; Ultra large scale integration; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
Type :
conf
DOI :
10.1109/ICSICT.1998.785853
Filename :
785853
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3063382
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