Title :
Integration of CVD W on IMP Ti and TiN
Author :
Tanaka, Yoichiro ; Yao, Congda ; Van Gogh, J. ; Herner, Brad ; Zhang, John Yue ; Wang, Hou Gong ; Buckley, Lawrence ; Chakravarthy, Pratap ; Mak, Alfred ; Ghanayem, Steve
Author_Institution :
Metal Deposition Product Group, Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
Chemical vapor deposition of tungsten (W) and physical vapor deposition of Ti/TiN was optimized to provide a minimum thickness TiN barrier while maintaining protection of Ti underlayer to prevent reaction with gases and W used in the CVD process. Improved ionized metal plasma (IMP) TiN deposition that minimized preferential TiN deposition on the via “lip”, coupled with W deposition that utilized a near 1:1 ratio of WF6:SiH4 gases in the nucleation film, resulted in vias with excellent step coverage of the W film in the via without interaction between the liner materials and CVD gases
Keywords :
chemical vapour deposition; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; plasma deposition; titanium; titanium compounds; tungsten; CVD W; IMP Ti; SiH4; Ti underlayer; TiN; TiN barrier; W deposition; W-Ti-TiN; WF6; chemical vapor deposition; ionized metal plasma TiN deposition; nucleation film; physical vapor deposition; preferential TiN deposition; reaction; step coverage; tungsten; via; Gases; Hydrogen; Plasma sources; Rapid thermal annealing; Semiconductor films; Simulated annealing; Substrates; Thermal expansion; Tin; Tungsten;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785855
