Title :
Properties of CVD-W overgrowth on PVD and MOCVD TiN layers
Author :
Peng, Y.C. ; Chen, L.J. ; Hsieh, W.Y. ; Yang, Y.R. ; Hsieh, Y.F.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The structure and electrical properties of CVD-W films on various PVD or MOCVD TiN films have been investigated. The growth orientations of the TiN adhesion layers were controlled by deposition method and film thickness. The growth orientations of CVD-W films were found to depend strongly on the microstructures of TiN. The grain sizes and electrical resistivity of CVD-W were found to increase and decrease, respectively, with the grain sizes of underlying TIN layers
Keywords :
adhesion; chemical vapour deposition; crystal orientation; diffusion barriers; electrical resistivity; grain size; integrated circuit metallisation; interface structure; metallic thin films; titanium compounds; tungsten; CVD-W films; CVD-W overgrowth; MOCVD TiN layers; PVD TiN layers; TiN; W-TiN; deposition method; electrical properties; electrical resistivity; film thickness; grain sizes; growth orientations; microstructures; structure; Adhesives; Atherosclerosis; Collimators; Electric resistance; Grain size; MOCVD; Microstructure; Plasma temperature; Sputtering; Tin;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785856
