The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs

Author

Kruger, Jorg ; Yan Chin Shih ; Xiao, Liu ; Wang, C.L. ; Morse, J.D. ; Rogalla, Markus ; Runge, K. ; Weber, Eicke R.

Author_Institution

Center for Adv. Mater., California Univ., Berkeley, CA, USA

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

345

Lastpage

348

Abstract

Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. The density of charged arsenic antisites also determines the charge collection efficiency of Schottky diodes made of GaAs

Keywords

III-V semiconductors; Schottky diodes; carrier lifetime; gallium arsenide; neutron effects; point defects; GaAs; Schottky diodes; arsenic antisite defects; carrier lifetime; carrier trapping center; charge collection efficiency; fast neutron irradiation; native point defects; semi-insulating GaAs; Charge carrier lifetime; Cooling; Detectors; Gallium arsenide; Laboratories; Neutrons; Schottky diodes; Silicon; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571116

Filename

571116