Title :
The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs
Author :
Kruger, Jorg ; Yan Chin Shih ; Xiao, Liu ; Wang, C.L. ; Morse, J.D. ; Rogalla, Markus ; Runge, K. ; Weber, Eicke R.
Author_Institution :
Center for Adv. Mater., California Univ., Berkeley, CA, USA
fDate :
29 Apr-3 May 1996
Abstract :
Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. The density of charged arsenic antisites also determines the charge collection efficiency of Schottky diodes made of GaAs
Keywords :
III-V semiconductors; Schottky diodes; carrier lifetime; gallium arsenide; neutron effects; point defects; GaAs; Schottky diodes; arsenic antisite defects; carrier lifetime; carrier trapping center; charge collection efficiency; fast neutron irradiation; native point defects; semi-insulating GaAs; Charge carrier lifetime; Cooling; Detectors; Gallium arsenide; Laboratories; Neutrons; Schottky diodes; Silicon; Spectroscopy; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571116
