Title :
Electromigration mechanisms in Cu lines
Author :
Hu, C.-K. ; Rosenberg, R.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Summary form only given. The electromigration in 0.15 μm to 10 μm wide and 0.3 μm thick Cu lines deposited by physical vapor deposition has been investigated using both resistance and edge displacement techniques in the sample temperature range 225°C-405°C. For wide polycrystalline lines (>1 μm), the dominant diffusion mechanism is a mixture of grain boundary and surface diffusion, while in narrow lines (< 1 μm) the dominant mechanism is surface transport. The electromigration lifetime of fine Cu lines is estimated
Keywords :
copper; electromigration; grain boundary diffusion; integrated circuit interconnections; integrated circuit metallisation; life testing; metallic thin films; surface diffusion; vapour deposited coatings; 0.15 to 10 mum; 225 to 405 C; Cu; Cu lines; diffusion mechanism; edge displacement; electromigration lifetime; electromigration mechanisms; grain boundary diffusion; narrow lines; physical vapor deposition; resistance; surface diffusion; surface transport; wide polycrystalline lines; Artificial intelligence; Capacitance; Conductivity; Copper; Delay lines; Electromigration; Integrated circuit interconnections; Metallization; Surface resistance; USA Councils;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785864
