CVD and PVD transition metal nitrides as diffusion barriers for Cu metallization

Author

Sun, S.C.

Author_Institution

R&D, Semicond.. Manuf. Co., Hsinchu, Taiwan

fYear

1998

fDate

1998

Firstpage

243

Lastpage

246

Abstract

The physical and electrical properties of transitional metal nitrides: tantalum nitride, tungsten nitride and molybdenum nitride thin films deposited by thermal decomposition of metalorganic precursors of TBTDET, BTBTW, and BDBTM have been investigated. The films have an excellent step coverage over high aspect-ratio contact holes as well as low carbon concentration. Strong metal to nitrogen double bonds in the precursors preserved the cubic phase of the films during the pyrolysis process and subsequently yielded low-resistivity films. X-ray diffraction (XRD) and wavelength dispersive spectroscopy (WDS) results indicated that the as-deposited films have face centered cubic (fcc) phase polycrystalline structure. Diffusion barrier properties of these films for copper metallization were studied by SEM, TEM, diode leakage current measurement and secondary ion mass spectroscopy (SIMS) analysis. The metal nitride thin films deposited by physical-vapor-deposition (PVD) were compared to CVD films as well

Keywords

CVD coatings; X-ray chemical analysis; dielectric thin films; diffusion barriers; electrical resistivity; integrated circuit metallisation; leakage currents; molybdenum compounds; scanning electron microscopy; secondary ion mass spectra; tantalum compounds; transmission electron microscopy; tungsten compounds; BDBTM; BTBTW; CVD; Cu metallization; Cu-MoN-Si; Cu-TaN-Si; Cu-WN-Si; PVD; SEM; SIMS; TBTDET; TEM; X-ray diffraction; carbon concentration; cubic phase; diffusion barriers; diode leakage current; double bonds; high aspect-ratio contact holes; low-resistivity films; metalorganic precursors; polycrystalline structure; pyrolysis; thermal decomposition; thin films; transition metal nitrides; wavelength dispersive spectroscopy; Atherosclerosis; Contacts; Copper; Dispersion; Nitrogen; Sputtering; Thermal decomposition; Tungsten; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785865

Filename

785865