Title :
Multilayer solid phase reaction and epitaxial growth of metal silicide on Si
Author :
Li, Bing-Zong ; Qu, Xin-Ping ; Ru, Guo-Ping ; Mo, Hong-Xiang ; Liu, Jing
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
Co-silicide/Si hetero-epitaxial growth by solid phase reaction of various multilayers with a Ti-interlayer and its mechanism are studied and discussed
Keywords :
Auger electron spectra; Rutherford backscattering; X-ray diffraction; atomic force microscopy; chemical interdiffusion; cobalt compounds; elemental semiconductors; epitaxial layers; rapid thermal annealing; silicon; solid phase epitaxial growth; AES; AFM; Co-Ti-Si; CoSi2-Si; RBS; Ti-interlayer; XRD; epitaxial growth; metal silicide; multilayer solid phase reaction; multilayers; rapid thermal annealing; Epitaxial growth; Fabrication; Integrated circuit interconnections; Large Hadron Collider; Nonhomogeneous media; Silicidation; Silicides; Solids; Very large scale integration; Virtual colonoscopy;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785867
