DocumentCode
3063866
Title
Characterization of 24 stacked InGaAs quantum dot laser fabricated by ultrahigh-rate MBE growth technique
Author
Tanoue, F. ; Sugawara, H. ; Akahane, Kouichi ; Yamamoto, Naoji
Author_Institution
Grad. Sch. of Syst. Design, Tokyo Metropolitan Univ., Hino, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
Highly stacked of 24 InGaAs/GaAs quantum dot laser was prepared using ultrahigh-rate MBE growth technique and observed laser emission at 1070nm, and its internal quantum efficiency evaluated to be 22.0%.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum dot lasers; InGaAs-GaAs; efficiency 22.0 percent; internal quantum efficiency; laser emission; stacked InGaAs-GaAs quantum dot laser; ultrahigh-rate MBE growth technique; wavelength 1070 nm; Cavity resonators; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600425
Filename
6600425
Link To Document