Title :
Charge-to-breakdown (QBD): a method to monitor the ultrathin tunnel oxide in E2PROM
Author :
Bin, Zhao Wen ; Ming, Xiao ; Zheng, Xu ; Kang, Zhang An
Author_Institution :
208 Post Box PC214035, Wuxu, China
Abstract :
The dielectric reliability of the thin tunnel oxide film has been characterized and monitored by using the constant-current-stressed QBD test. Charge trapping in the tunnel oxide is an intrinsic failure mechanism associated with E2PROM, QBD testing method is described. High performance E2PROM devices were fabricated using 8 nm tunnel oxide with QBD>5C/cm2, excellent W/E endurance over one million cycles was acquired
Keywords :
EPROM; dielectric thin films; electric breakdown; electron traps; elemental semiconductors; reliability; silicon; silicon compounds; Si-SiO2; charge trapping; charge-to-breakdown; constant-current-stress test; dielectric reliability; high performance E2PROM devices; thin tunnel oxide film; ultrathin tunnel oxide; Current density; Design for quality; Dielectric thin films; Electrons; MOS capacitors; Monitoring; Nonvolatile memory; PROM; Substrates; Testing;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785876
