DocumentCode
3063884
Title
A low noise NMOSFET with overlaid metal gate
Author
Hsiao, C.-C. ; Chen, M.-S. ; Chiang, Y.-C.
Author_Institution
Inst. of Electr. Eng., Chang Gung Univ., Tao-Yuan, Taiwan
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1711
Abstract
A new MOSFET device structure which adopts a overlaid-metal over poly-Si gate is proposed for using in RF low-noise amplification. Measurement result shows the minimum noise figure as well as the noise resistance of overlaid-metal gate MOSFET (OMGMOS) are smaller than conventional MOSFET. The equivalent circuit model of this OMGMOS device is generated and compared to that of the conventional MOSFET with same physical geometry. It shows the better noise characteristic of OMGMOS is mainly due to the decrease of the gate resistance.
Keywords
MOSFET; equivalent circuits; semiconductor device models; semiconductor device noise; NMOSFET; OMGMOS; RF low noise amplification; Si; equivalent circuit model; noise figure; noise resistance; overlaid metal gate MOSFET; polysilicon gate; CMOS technology; Circuit noise; Electrical resistance measurement; Equivalent circuits; FETs; Fingers; MOSFET circuits; Noise figure; Noise measurement; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700710
Filename
700710
Link To Document