Title :
Dependence of ultra-thin gate oxide reliability on surface cleaning approach
Author :
Wenyu, Gao ; Zhongli, Liu ; Zhijing, He
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H2SO4 /H2O2(SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides
Keywords :
MOS capacitors; elemental semiconductors; oxidation; reliability; silicon; silicon compounds; surface cleaning; H2O2; H2SO4; Si; SiO2-Si; hot-carrier immunity; oxidation; oxide integrity; reliability; surface cleaning; ultra-thin gate oxide; Chemicals; Ethanol; Hafnium; Hot carriers; MOS capacitors; Oxidation; Scanning probe microscopy; Silicon; Surface cleaning; Surface treatment;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785877
