Title :
TDDB characteristics of PETEOS SiO2 under pulse stress
Author :
Limin, Weng ; Gangning, Wang ; Jin, Wang ; Huanzhang, Fan ; Chunfang, Xu
Author_Institution :
Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
Abstract :
Assuming that time dependent dielectric breakdown (TDDB) depends on the density of trapped charges in the dielectrics, we propose a model which explains the difference of TDDB characteristics between pulsed stress and constant stress. Trapped charges increase under electrical stress because of the trap generation while decrease after the stress is removed due to detrapping. With the pulse stress TDDB lifetime test system designed by ourselves, TDDB characteristics of PETEOS SiO2 films under both pulse stress and constant stress are compared. The results indicate that TDDB characteristics of PETEOS SiO2 develop as the pulse frequency increase
Keywords :
dielectric thin films; electric breakdown; electron traps; plasma CVD coatings; silicon compounds; PECVD; PETEOS; Si; SiO2; SiO2 films; TEOS precursor; constant stress; detrapping; electrical stress; pulse frequency; pulse stress; time dependent dielectric breakdown; trap generation; trapped charge density; Capacitors; Chemical vapor deposition; Dielectric films; Dielectric substrates; Electrodes; Electron traps; Plasma temperature; Pulse generation; Semiconductor films; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785878
