• DocumentCode
    3063918
  • Title

    TDDB characteristics of PETEOS SiO2 under pulse stress

  • Author

    Limin, Weng ; Gangning, Wang ; Jin, Wang ; Huanzhang, Fan ; Chunfang, Xu

  • Author_Institution
    Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    295
  • Lastpage
    297
  • Abstract
    Assuming that time dependent dielectric breakdown (TDDB) depends on the density of trapped charges in the dielectrics, we propose a model which explains the difference of TDDB characteristics between pulsed stress and constant stress. Trapped charges increase under electrical stress because of the trap generation while decrease after the stress is removed due to detrapping. With the pulse stress TDDB lifetime test system designed by ourselves, TDDB characteristics of PETEOS SiO2 films under both pulse stress and constant stress are compared. The results indicate that TDDB characteristics of PETEOS SiO2 develop as the pulse frequency increase
  • Keywords
    dielectric thin films; electric breakdown; electron traps; plasma CVD coatings; silicon compounds; PECVD; PETEOS; Si; SiO2; SiO2 films; TEOS precursor; constant stress; detrapping; electrical stress; pulse frequency; pulse stress; time dependent dielectric breakdown; trap generation; trapped charge density; Capacitors; Chemical vapor deposition; Dielectric films; Dielectric substrates; Electrodes; Electron traps; Plasma temperature; Pulse generation; Semiconductor films; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785878
  • Filename
    785878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063918