Title :
Experimental and theoretical study on digital-alloy In(Ga1−zAlz)As structure
Author :
Duchang Heo ; Song, J.D. ; Han, I.K. ; Yang, Kun ; Kim, Jung-Ho ; Jeon, Sanggeun
Author_Institution :
Korea Electrotechnol. Res. Inst., Ansan, South Korea
fDate :
June 30 2013-July 4 2013
Abstract :
To fully understand optical properties of digital-alloy (InGaAs)1-z(InAlAs)z grown on InP by MBE, we theoretically calculate the emission energies of digital-alloy (InGaAs)1-z(InAlAs)z using 4×4 k·p Hamiltonian and compare them with photoluminescence data.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; k.p calculations; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; In(Ga1-zAlz)As; InP; MBE; digital-alloy structure; emission energies; k·p Hamiltonian; optical properties; Digital alloys; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical superlattices; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600431
