Title :
1H NMR studies of PECVD a-SiNX:H
Author :
Yihua, He ; Limin, Weng ; Chunfang, Xu ; Guang, Yang ; Xuewen, Wu
Author_Institution :
Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
Abstract :
1H NMR measurements were performed in plasma-chemical-vapor-deposited amorphous hydrogenated silicon nitride (PECVD a-SiNX:H) films. The spectra were used to analysis the hydrogen content and distribution which were varied with the deposition condition such as substrate temperature (Ts) and radiofrequency (rf) power. The effects of annealing were also discussed
Keywords :
amorphous state; annealing; dielectric thin films; plasma CVD; proton magnetic resonance; silicon compounds; 1H NMR; PECVD films; RF power; SiN:H; amorphous films; annealing; hydrogen content; hydrogen distribution; substrate temperature; Amorphous materials; Hydrogen; Nuclear magnetic resonance; Performance evaluation; Plasma measurements; Plasma temperature; Radio frequency; Semiconductor films; Silicon; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785881
