Title :
Combination mechanism of oxygen in heavily Sb-doped CZ silicon
Author :
Caichi, Liu ; Qinglu, Wang ; Yangxian, Li ; Bingyan, Ren ; Yuesheng, Xu ; Duanlin, Que
Author_Institution :
Nat. Key Lab. of Silicon Mater., Zhejiang Univ., Hangzhou, China
Abstract :
It was determined that oxygen concentration in heavily Sb-doped CZSi was about 40% lower than that in the lightly doped samples and decreased with increasing content of Sb, but don´t decreased in heavily B-doped sample by means of CERDA. Through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb2O3 evaporation can be neglected. The main reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when Sb atoms with larger radius doped degenerately into silicon crystal
Keywords :
antimony; crystal growth from melt; elemental semiconductors; evaporation; heavily doped semiconductors; oxygen; semiconductor growth; silicon; solubility; Si:Sb,O; concentration reduction; heavily Sb-doped CZ silicon; melt free surface; oxygen concentration; oxygen loss by evaporation; thermodynamic calculation; Atomic measurements; Capacitive sensors; Crystalline materials; Lattices; Life estimation; Oxidation; Oxygen; Silicon; Testing; Thermodynamics;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785889
