Title :
Gettering of metal impurities in silicon by fast neutron irradiation
Author :
Caichi, Liu ; Yangxian, Li
Author_Institution :
Mater. Res. Center, Hebei Univ. of Technol., China
Abstract :
Some irradiated defects were introduced into p-type CZ Si by fast-neutron irradiation, they interact with oxygen in CZ Si during high temperature annealing, enhance the oxygen out-diffusion on the wafer surface and promote the precipitation of oxygen in the silicon bulk. Utilizing the combination of fast-neutron irradiation and intrinsic gettering (IG), a new excellent gettering technology only with one-step high temperature heat-treatment was invented, instead of multistep processing in conventional IG technology. With our new gettering technology, the metal impurities (Fe,Ni) on the surface of p-type <111>-oriented CZSi wafers was efficiently inhibited
Keywords :
annealing; elemental semiconductors; getters; iron; neutron effects; nickel; oxygen; precipitation; silicon; surface contamination; Fe; Ni; Si:O,Fe,Ni; fast neutron irradiation; gettering; high temperature annealing; intrinsic gettering; irradiated defects; metal impurities; one-step high temperature heat-treatment; oxygen; oxygen out-diffusion; p-type <111>-oriented CZ Si wafers; p-type CZ Si; precipitation; silicon; surface; Annealing; Chemical analysis; Etching; Gettering; Impurities; Neutrons; Silicides; Silicon; Surface treatment; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785891
