• DocumentCode
    3064235
  • Title

    Simple extraction of effective dielectric permittivity and magnetic permeability in IC transmission lines on multilayer substrates

  • Author

    Arnaudov, Radosvet G. ; Borisov, R.B.

  • Author_Institution
    Dept. of Microelectron., Tech. Univ. Sofia, Sofia, Bulgaria
  • fYear
    2012
  • fDate
    20-22 Nov. 2012
  • Firstpage
    947
  • Lastpage
    950
  • Abstract
    Methodology for extracting the effective dielectric and magnetic constants of microstrip transmission lines on multilayer substrates, from measured or simulated S-parameters data, using on-chip test structures, has been demonstrated. The methodology consists of: 1) building on-chip interconnect structures usually implemented in calibration and de-embedding procedures in microwave on-wafer test and measurements - transmission lines, stubs and pad launchers; 2) extracting the effective dielectric and magnetic constants straightforward from the characteristic impedance and propagation constant of these structures, fully described by measured or EM-simulated S-parameters. The demonstrated methodology is applicable for evaluation of dielectric and semiconductor multilayer substrates, both with lossy and lossless characteristics over a broad frequency band. Another advantage is implementation of very short transmission line structures with physical dimensions much smaller than quarter wavelength of the highest investigated band frequency, thus preserving valuable chip area in the test structures and being compatible with some of the calibration TRL elements.
  • Keywords
    S-parameters; magnetic permeability; microstrip lines; permittivity; transmission lines; EM-simulated S-parameters; IC transmission lines; dielectric multilayer substrates; dielectric permittivity; magnetic permeability; microstrip transmission lines; microwave on-wafer test; on-chip interconnect structures; on-chip test structures; semiconductor multilayer substrates; Dielectrics; Impedance; Power transmission lines; Scattering parameters; Semiconductor device measurement; Substrates; Transmission line measurements; Effective dielectric and magnetic constants; S-parameters; calibration and de-embedding structures; characteristic impedance; multilayer substrates; on-wafer test and measurements; propagation constant;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Forum (TELFOR), 2012 20th
  • Conference_Location
    Belgrade
  • Print_ISBN
    978-1-4673-2983-5
  • Type

    conf

  • DOI
    10.1109/TELFOR.2012.6419365
  • Filename
    6419365