Multipliers with transparent a-GIZO TFTs using a neural model

Author

Bahubalindruni, G. ; Duarte, Candido ; Tavares, Vitor G. ; Barquinha, Pedro ; Martins, Rui P. ; Fortunato, Elvira ; de Oliveira, Pedro Guedes

Author_Institution

Fac. of Eng., Univ. of Porto, Porto, Portugal

fYear

2012

fDate

20-22 Nov. 2012

Firstpage

955

Lastpage

958

Abstract

This paper presents the results of a preliminary study to examine the ability of post-silicon devices for analog processing. It is focused on the latest thin-film transistors (TFTs) with amorphous gallium-indium-zinc oxide (a-GIZO) as active layer. Three circuit configurations are presented: a differential pair and two multiplier topologies. Both triode and saturation regions of operation are included in the analysis, with the devices set to remain in strong accumulation. A neural model, which is developed based on the measured data of the TFTs, is used for the circuit simulations in the Cadence Virtuoso environment. The analog multipliers simulation results are compared against the expected functional results.

Keywords

III-V semiconductors; amorphous semiconductors; differential amplifiers; gallium compounds; indium compounds; multiplying circuits; thin film transistors; zinc compounds; Cadence Virtuoso environment; GaInZnO; active layer; analog multipliers; analog processing; circuit simulations; differential pair; neural model; post-silicon devices; saturation region; thin-film transistors; transparent amorphous TFT; triode region; Artificial neural networks; Data models; Integrated circuit modeling; Linearity; Mathematical model; Thin film transistors; a-GIZO TFTs; multipliers; neural models;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Forum (TELFOR), 2012 20th

Conference_Location

Belgrade

Print_ISBN

978-1-4673-2983-5

Type

conf

DOI

10.1109/TELFOR.2012.6419367

Filename

6419367