Title :
Piezoelectric MEMS stress sensor with thin lead zirconate titanate (PZT) layer
Author :
Kolev, G. ; Aleksandrova, Marharyta ; Videkov, V. ; Denishev, K. ; Truhchev, P.
Author_Institution :
Dept. of Microelectron., Tech. Univ. Sofia, Sofia, Bulgaria
Abstract :
In this study results from fabrication and testing of MEMS stress sensor with piezoelectric sensitive layer of lead zirconate titanate (PZT) are presented. PZT layers are deposited by RF-sputtering in vacuum. The dependence of the voltage, generated by the structure, on the applied stress is investigated for two different electrode configurations - sandwich type and lateral type, with aluminum electrodes. The obtained results show high piezoelectric coefficient of 186 pC for thickness of PZT-layer of 180 nm. The maximal generated voltage is 35 mV for lateral structure in the stress range of 0-300 mgr. The sandwich structure is sensitive above 1,1 gr and the maximal voltage is 200 mV.
Keywords :
electrodes; lead compounds; microsensors; piezoelectric transducers; sputter deposition; stress measurement; vacuum deposition; PZT; RF-sputtering; aluminum electrodes; electrode configurations; piezoelectric MEMS stress sensor; piezoelectric coefficient; piezoelectric sensitive layer; size 180 nm; thin lead zirconate titanate layer; voltage 200 mV; voltage 35 mV; Electrodes; Micromechanical devices; Sputtering; Stress; Substrates; Voltage measurement; MEMS; PZT; piezoelectric; sensors;
Conference_Titel :
Telecommunications Forum (TELFOR), 2012 20th
Conference_Location :
Belgrade
Print_ISBN :
978-1-4673-2983-5
DOI :
10.1109/TELFOR.2012.6419376
