DocumentCode
3064483
Title
RF modeling issues of deep-submicron MOSFETs for circuit design
Author
Cheng, Yuhua ; Schroter, Michael ; Enz, Christian ; Matloubian, Mishel ; Pehlke, David
Author_Institution
Semicond. Syst., Rockwell Int. Corp., Newport Beach, CA, USA
fYear
1998
fDate
1998
Firstpage
416
Lastpage
419
Abstract
This paper provides an overview of important issues in CMOS MOSFET modeling for radio frequency (RF) applications. Beginning with a brief review of state-of-the-art of RF CMOS technology, we discuss modeling issues that need to be resolved to meet the requirements from circuit designers. Then, we present our current achievements and activities in compact MOSFET modeling for RF circuit design
Keywords
CMOS integrated circuits; MOSFET; integrated circuit modelling; reviews; semiconductor device models; CMOS MOSFET modeling; RF CMOS technology; RF circuit design; RF modeling; circuit design; compact MOSFET modeling; deep-submicron MOSFETs; overview; radio frequency applications; review; state-of-the-art; CMOS process; CMOS technology; Circuit simulation; Circuit synthesis; Costs; MOSFETs; Predictive models; Radio frequency; Semiconductor device modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785910
Filename
785910
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