Title :
The influence of tunneling effect and inversion layer quantization effect on deep submicron MOSFET
Author :
Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
Based on the studies of the two dimensional nature of electrons in inversion layer of the ultra thin gate oxide MOSFET model to describe tunneling effect and inversion layer quantization effect on deep submicron MOSFET´s threshold voltage is developed. By using of this model the influence of tunneling effect and the inversion layer quantization effect on the MOSFET threshold voltage can be estimated
Keywords :
MOSFET; inversion layers; quantisation (quantum theory); semiconductor device models; tunnelling; deep submicron MOSFET; inversion layer quantization; quantum mechanical tunneling; threshold voltage; two-dimensional electrons; ultra thin gate oxide model; Effective mass; Eigenvalues and eigenfunctions; Electrons; Electrostatics; Energy states; MOSFET circuits; Poisson equations; Quantization; Threshold voltage; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785914
