DocumentCode
3064553
Title
The influence of tunneling effect and inversion layer quantization effect on deep submicron MOSFET
Author
Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi
Author_Institution
Inst. of Microelectron., Beijing Univ., China
fYear
1998
fDate
1998
Firstpage
432
Lastpage
434
Abstract
Based on the studies of the two dimensional nature of electrons in inversion layer of the ultra thin gate oxide MOSFET model to describe tunneling effect and inversion layer quantization effect on deep submicron MOSFET´s threshold voltage is developed. By using of this model the influence of tunneling effect and the inversion layer quantization effect on the MOSFET threshold voltage can be estimated
Keywords
MOSFET; inversion layers; quantisation (quantum theory); semiconductor device models; tunnelling; deep submicron MOSFET; inversion layer quantization; quantum mechanical tunneling; threshold voltage; two-dimensional electrons; ultra thin gate oxide model; Effective mass; Eigenvalues and eigenfunctions; Electrons; Electrostatics; Energy states; MOSFET circuits; Poisson equations; Quantization; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785914
Filename
785914
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