Title :
A new physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation
Author :
Xi, Xuemei ; Wang, Hongmei ; Zhang, Xing ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
A new analytical current model in the strong inversion operation region for fully depleted SOI/MOSFET with channel lengths down to deep submicrometer range is developed with only one single expression for both linear and saturation region without using a smoothing function. The convergence when employed in circuit simulators is improved. Measurements on devices of varied geometry show good agreement with model predictions
Keywords :
MOSFET; circuit simulation; semiconductor device models; silicon-on-insulator; Si; analogue/digital circuit simulation; analytical current model; convergence improvement; deep-submicron SOI MOSFETs; fully depleted SOI MOSFET; physical I-V model; strong inversion operation region; Analytical models; Circuit simulation; Convergence; Digital circuits; Equations; MOSFETs; Microelectronics; Semiconductor device modeling; Smoothing methods; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785915
