Title :
Unified deep-submicron MOSFET model for circuit simulation
Author :
Zhang, Wen-Liang ; Tian, Li-Lin ; Yang, Zhi-Lian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this paper, a new model for deep-submicrometer MOSFETs is developed, which includes various second-order physical effects in the operations of deep-submicrometer MOSFET´s. In the model, a unified formula is used to describe all the operation regions, which keeps the model C∞-continuous. The model is suitable for both digital and analog MOS circuit simulations. A good fitting has been achieved between the model and experiment data
Keywords :
MOSFET; circuit simulation; semiconductor device models; analog MOS circuit simulation; circuit simulation; deep-submicron MOSFET model; digital MOS circuit simulation; drain current model; operation regions; second-order physical effects; unified formula; Circuit simulation; Doping; Equations; Intrusion detection; MOS devices; MOSFET circuits; Microelectronics; Predictive models; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785916
