DocumentCode :
3064632
Title :
The development of deep sub micrometer semiconductor device simulation based on the CORBA platform
Author :
Lianfeng, Yang ; Jin, Wu ; Nasirjan ; Tongli, Wei
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
fYear :
1998
fDate :
1998
Firstpage :
443
Lastpage :
446
Abstract :
This paper has discussed the designs of general deep sub micrometer semiconductor device simulation software based on the proposed object model of drift diffusion. Because of the properties of object-oriented design, it is easy to add models and methods into the existent system. Thus, a network distributed calculation model based on the CORBA platform can be realized on the basis of this object model. Using CORBA technology, we can make full use of the existent network resources to solve the problems of the calculation scale and speed in device simulation by parallel calculation
Keywords :
digital simulation; electronic engineering computing; finite difference methods; object-oriented methods; parallel algorithms; partial differential equations; semiconductor device models; CORBA platform; deep submicron semiconductor device simulation; device simulation; drift diffusion model; network distributed calculation model; object model; object-oriented design; simulation software; Distributed decision making; Encapsulation; Hardware; Object oriented modeling; Poisson equations; Predictive models; Semiconductor devices; Software design; Software systems; Standards organizations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
Type :
conf
DOI :
10.1109/ICSICT.1998.785917
Filename :
785917
Link To Document :
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