Title :
Intracavity frequency doubling at 261nm of an actively Q-switched Pr:LiYF4 laser
Author :
Kojou, Junichiro ; Abe, Ryo ; Sakurai, Akito ; Kannari, Fumihiko
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We report actively Q-switched deep ultra-violet laser operation at 261nm by intracacity frequency doubling of InGaN laser diode pumped Pr:LiFY4 laser. We obtained a maximum peak power of 61.6W(8.7 μJ/pulse) at 261 nm.
Keywords :
III-V semiconductors; Q-switching; gallium compounds; indium compounds; laser cavity resonators; lithium compounds; optical harmonic generation; optical pumping; praseodymium; solid lasers; ultraviolet spectra; wide band gap semiconductors; InGaN; LiFY4:Pr; actively Q-switched deep ultraviolet laser; intracavity frequency doubling; laser diode pumping; power 61.6 W; wavelength 261 nm; Cavity resonators; Crystals; Laser excitation; Mirrors; Power lasers; Pump lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600462
