Title :
Low kinetic-energy particle process for hillock-free pure aluminum metallization
Author :
Ohmi, T. ; Kuwabara, H. ; Shibata, T. ; Kowata, N. ; Sugiyama, K.
Author_Institution :
Dept. of Electron., Tohoku Univ., Sendai, Japan
Abstract :
Formation of hillock-free aluminum films has been realized by a low-kinetic-energy particle process. The process utilized the low-energy (a few tens of electron volts) Ar-ion bombardment of the growing film surface for modifying the thin-film properties. Completely
Keywords :
aluminium; insulated gate field effect transistors; ion beam applications; metallic epitaxial layers; metallisation; surface topography; vapour phase epitaxial growth; Al; Ar ion bombardment; MOSFET characteristics; Si substrates; epitaxial growth; growing film surface; hillock free films; low-kinetic-energy particle process; metallization; Aluminum; Argon; Electrons; Integrated circuit interconnections; Metallization; Optical films; Radio frequency; Sputtering; Substrates; Transistors;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location :
Santa Clara, CA, USA
DOI :
10.1109/VMIC.1988.14224
