DocumentCode
3064661
Title
Low kinetic-energy particle process for hillock-free pure aluminum metallization
Author
Ohmi, T. ; Kuwabara, H. ; Shibata, T. ; Kowata, N. ; Sugiyama, K.
Author_Institution
Dept. of Electron., Tohoku Univ., Sendai, Japan
fYear
1988
fDate
13-14 June 1988
Firstpage
446
Lastpage
452
Abstract
Formation of hillock-free aluminum films has been realized by a low-kinetic-energy particle process. The process utilized the low-energy (a few tens of electron volts) Ar-ion bombardment of the growing film surface for modifying the thin-film properties. Completely
Keywords
aluminium; insulated gate field effect transistors; ion beam applications; metallic epitaxial layers; metallisation; surface topography; vapour phase epitaxial growth; Al; Ar ion bombardment; MOSFET characteristics; Si substrates; epitaxial growth; growing film surface; hillock free films; low-kinetic-energy particle process; metallization; Aluminum; Argon; Electrons; Integrated circuit interconnections; Metallization; Optical films; Radio frequency; Sputtering; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location
Santa Clara, CA, USA
Type
conf
DOI
10.1109/VMIC.1988.14224
Filename
14224
Link To Document