DocumentCode
3064715
Title
A new model for EEPROM cell
Author
Hong, Zhiliang
Author_Institution
Dept. of Electr. Eng., Fudan Univ., Shanghai, China
fYear
1998
fDate
1998
Firstpage
453
Lastpage
456
Abstract
A new model is presented for an EEPROM cell using devices existing in most simulators. Transient simulation can be performed with this model when the EEPROM cells perform erase, write and read operations. The compatibility has been verified by the examples in this paper
Keywords
CMOS memory circuits; EPROM; equivalent circuits; integrated circuit modelling; semiconductor device models; transient analysis; EEPROM cell model; erase operation; read operation; transient simulation; write operation; Breakdown voltage; Capacitors; Coupling circuits; EPROM; Electric breakdown; Equivalent circuits; MOSFETs; Nonvolatile memory; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785920
Filename
785920
Link To Document