Numerical simulation of semiconductor devices considering self-heating effects

Electro-thermal simulation, which considers the influence of self-heating effects an semiconductor devices, is becoming more and more important. But as the popular device simulator, PISCES-2ET needs a big improvement in order to realize simulation including lattice temperature, since the simulator has paid more attention to carrier temperature rather than lattice temperature. This paper presents an electro-thermal device simulation program which is developed on the basis of the device simulation program PISCES-2H. In comparison with PISCES-2ET, our program includes the influence of lattice temperature on Poisson´s equation and the electric field, providing additional thermal boundary conditions and temperature dependent models. Furthermore, two additional numerical methods are adopted according to the characteristics of the electro-thermal simulation in our program. They are more suitable for simulation considering self-heating effects than the common Gummel and full Newton methods