DocumentCode
3065410
Title
Self-heating effect in SOI MOSFETs
Author
Zimin, Sun ; Litian, Liu ; Zhijian, Li
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
1998
fDate
1998
Firstpage
572
Lastpage
574
Abstract
Self-heating effect in SOI MOSFETs affects the carrier mobility, SOI MOSFETs threshold voltage and the band gap of silicon in channel. The mechanism of heat generation and heat dissipation in SOI MOSFETs is analyzed in this paper on the basis of which a simple self-heating effect model is established. The model introduces only one factor related with self-heating effect whose value can be easily determined according to the device structure parameters. The model is also verified experimentally
Keywords
MOSFET; carrier mobility; energy gap; semiconductor device models; silicon-on-insulator; SOI MOSFET; band gap; carrier mobility; heat dissipation; heat generation; self-heating effect model; threshold voltage; Aluminum; Equations; Heating; MOSFET circuits; Photonic band gap; Power dissipation; Silicon; Temperature; Thermal conductivity; Thermal factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785951
Filename
785951
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