Title :
Nonlinear modeling of 4 W 12 mm multi-cell microwave power GaAs MESFET
Author :
Gu, Cong ; Qian, Gang ; Liu, Youbao
Author_Institution :
Graduate Dept., Shaanxi Lishan Microelectron. Inst., Xi´´an, China
Abstract :
Based on the proposed many models for GaAs MESFET, we put forth a newly modified large-signal model for 4 W 12 mm multi-cell microwave power GaAs MESFET in this paper. The newly improved model presented here includes the analytical expressions of Ids(Vgs, V ds) elements operating at microwave frequency in large signal. Also comparison with three kinds of the original formula proposed by Materka, Jastrzebski and Curtice, we found that the modified Ids in here is more accuracy
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; 12 mm; 4 W; GaAs; large-signal characteristics; multi-cell microwave power GaAs MESFET; nonlinear model; Capacitance; Gallium arsenide; MESFETs; Microelectronics; Microwave devices; Microwave theory and techniques; Semiconductor process modeling; Signal analysis; Substrates; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785957
