AlGaAs/InGaAs PHEMT preamplifier for optical communication systems

Author

Ao, Jinping ; Liu, Shiyong ; Zeng, Qingming ; Zhao, Yonglin ; Cai, Keli ; Li, Xianjie ; Jiao, Zhixian ; Gao, Jianjun ; Liang, Chunguang

Author_Institution

Electron. Eng. Dept., Jilin Univ., Changchun, China

fYear

1998

fDate

1998

Firstpage

594

Lastpage

597

Abstract

The design, fabrication and characteristics of a AlGaAs/InGaAs PHEMT monolithic transimpedance preamplifier is described. The PHEMT material used here is based on δ-doped carrier supplying layer and GaAs/AlGaAs superlattice buffer. The transconductance and output conductance of a 1 μm-gate PHEMT is 250 mS/mm and 8mS/mm respectively with threshold voltage of -1.2 v, the maximum saturation current density is 235 mS/mm. On-wafer network analysis with HP8510 network analyzer shows its cut-off frequency of 21 GHz and maximum oscillation frequency of 40 GHz. Transimpedance preamplifier its measured maximum transimpedance gain of 51.4 dBΩ with -3 dB bandwidth no less than 5.05 GHz. The input equivalent-noise current density is 13 PA/√Hz

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; preamplifiers; δ-doped carrier supplying layer; -1.2 V; 1 micron; 21 GHz; 40 GHz; 5.05 GHz; AlGaAs-InGaAs; AlGaAs/InGaAs PHEMT; GaAs/AlGaAs superlattice buffer; HP8510 network analyzer; bandwidth; cut-off frequency; equivalent noise current density; maximum oscillation frequency; monolithic transimpedance preamplifier; optical communication system; output conductance; saturation current density; threshold voltage; transimpedance; transimpedance gain; Conducting materials; Current density; Cutoff frequency; Gallium arsenide; Indium gallium arsenide; Optical device fabrication; Optical fiber communication; Optical materials; PHEMTs; Preamplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785958

Filename

785958