Title :
Design consideration for planar doped barrier diodes´ dc characteristics
Author :
Jie, Wu ; Fangmin, Guo ; Guanqun, Xia
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
By variation of the thickness and doping concentration of the p + and intrinsic regions, the barrier height and asymmetry of the structure can be independently varied. A model is developed to investigate the extent to which the above factors may affect the PDBDs´ dc characteristics
Keywords :
semiconductor device models; semiconductor diodes; DC characteristics; design; model; planar doped barrier diode; Detectors; Gallium arsenide; Schottky barriers; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Semiconductor process modeling; Space charge; Thickness control; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785960
