Normal incident quantum well infrared photodetectors

Author

Lee, Chien-Ping ; Wang, Shiang-Yu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1998

fDate

1998

Firstpage

637

Lastpage

640

Abstract

By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs have also demonstrated with excellent performance

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; light absorption; photodetectors; quantum well devices; InGaAs; QWIPs; TE absorption; grating-free two color quantum well infrared photodetectors; high doping concentration; highly doped InGaAs quantum wells; highly strained InGaAs quantum wells; large normal incidence response; normal incidence quantum well infrared photodetectors; two-color QWIPs; Doping; Electromagnetic wave absorption; Etching; Fabrication; Gallium arsenide; Gratings; Indium gallium arsenide; Photodetectors; Quantum well devices; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785970

Filename

785970